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| Not for new design, this product will be obsoleted soon BFW92A Vishay Semiconductors Silicon NPN Planar RF Transistor 3 B Features * * * * High power gain Low noise figure e3 Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 E 2 1 1 C 19039 Applications Wide band RF amplifier up to GHz range. Electrostatic sensitive device. Observe precautions for handling. Mechanical Data Case: TO-50 Plastic case Weight: approx. 111 mg Marking: BFW92A Pinning: 1 = Collector, 2 = Emitter, 3 = Base Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb 60 C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 25 15 2.5 25 300 150 - 55 to + 150 Unit V V V mA mW C C Amplifier 1 Parameter Junction ambient 1) 1) Test condition Symbol RthJA Value 300 Unit K/W on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 m Cu Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage Test condition VCB = 10 V, IE = 0 VEB = 2.5 V, IC = 0 IC = 1 mA, IB = 0 IC = 20 mA, IB = 2 mA Symbol ICBO IEBO V(BR)CEO VCEsat hFE hFE ICES 20 20 100 A 15 0.1 50 0.6 150 Min Typ. Max 100 10 Unit nA A V V DC forward current transfer ratio VCE = 1 V, IC = 2 mA VCE = 1 V, IC = 25 mA Collector-emitter cut-off current VCE = 25 V, VBE = 0 Document Number 85041 Rev. 1.5, 08-Sep-08 www.vishay.com 1 BFW92A Vishay Semiconductors Electrical AC Characteristics Tamb = 25 C, unless otherwise specified Parameter Transition frequency Test condition VCE = 5 V, IC = 2 mA, f = 300 MHz VCE = 5 V, IC = 14 mA, f = 300 MHz VCE = 5 V, IC = 25 mA, f = 300 MHz Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Linear output voltage - two tone intermodulation test VCB = 5 V, f = 1 MHz VCE = 5 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 5 V, IC = 2 mA, ZS = 50 , f = 800 MHz VCE = 10 V, IC = 14 mA, ZS = 50 , f = 800 MHz VCE = 10 V, IC = 14 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Symbol fT fT fT Ccb Cce Ceb F Gpe V1 = V2 Min Typ. 1.5 3.5 3.2 0.45 0.3 1.4 2.5 13 150 Max Unit GHz GHz GHz pF pF pF dB dB mV www.vishay.com 2 Document Number 85041 Rev. 1.5, 08-Sep-08 BFW92A Vishay Semiconductors Common Emitter S-Parameters Z0 = 50 , Tamb = 25 C, unless otherwise specified VCE/V IC/mA f/MHz LIN MAG 5 2 40 100 200 500 800 1000 1200 5 5 40 100 200 500 800 1000 1200 5 10 40 100 200 500 800 1000 1200 5 14 40 100 200 500 800 1000 1200 5 20 40 100 200 500 800 1000 1200 10 2 40 100 200 500 800 1000 1200 10 5 40 0.84 0.81 0.71 0.46 0.37 0.36 0.37 0.69 0.62 0.48 0.29 0.27 0.28 0.30 0.50 0.42 0.31 0.22 0.23 0.25 0.27 0.40 0.32 0.25 0.21 0.22 0.24 0.27 0.30 0.25 0.21 0.20 0.23 0.25 0.27 0.86 0.83 0.73 0.48 0.37 0.35 0.36 0.71 S11 ANG deg -12.3 -29.8 -55.5 -112.8 -154.9 -176.5 164.3 -19.0 -44.5 -77.7 -140.0 -179.5 162.1 147.0 -28.1 -63.0 -102.5 -165.2 163.3 147.9 136.9 -34.7 -75.4 -117.5 -176.5 156.6 143.2 133.5 -44.1 -92.4 -134.8 175.3 151.7 140.1 131.1 -11.1 -26.9 -50.7 -105.5 -147.9 -170.9 168.4 -17.3 6.97 6.63 5.79 3.60 2.51 2.09 1.79 14.09 12.56 9.55 4.88 3.22 2.64 2.25 22.54 18.21 12.12 5.55 3.59 2.93 2.49 27.07 20.46 12.81 5.74 3.70 3.00 2.56 31.41 22.21 13.39 5.83 3.74 3.03 2.58 6.60 6.31 5.61 3.61 2.54 2.11 1.82 14.26 LIN MAG S21 ANG deg 171.2 157.6 138.3 101.7 79.9 68.5 59.2 166.1 146.9 124.4 91.8 74.4 64.8 56.7 159.9 136.2 113.8 86.2 71.0 62.7 55.1 156.6 131.2 109.6 84.2 69.8 61.7 54.4 153.0 126.9 105.9 82.5 68.6 60.7 53.5 172.0 159.2 140.8 104.3 82.4 71.1 61.7 166.7 0.01 0.03 0.05 0.07 0.08 0.09 0.10 0.01 0.02 0.04 0.06 0.08 0.10 0.11 0.01 0.02 0.03 0.06 0.08 0.10 0.12 0.01 0.02 0.03 0.05 0.08 0.10 0.12 0.01 0.02 0.02 0.05 0.08 0.11 0.12 0.01 0.02 0.04 0.06 0.07 0.07 0.08 0.01 LIN MAG S12 ANG deg 83.9 74.5 62.0 45.9 44.7 46.5 49.2 81.6 70.6 60.5 57.2 59.5 59.8 59.5 79.5 69.3 64.8 66.9 66.6 65.2 63.3 79.1 70.3 68.4 70.4 68.8 66.7 64.3 78.8 71.9 71.9 73.0 70.3 67.8 65.0 84.3 75.9 64.0 47.9 46.8 49.3 52.9 82.0 0.99 0.97 0.90 0.74 0.68 0.66 0.65 0.98 0.91 0.78 0.62 0.58 0.57 0.56 0.95 0.83 0.67 0.56 0.53 0.53 0.52 0.94 0.78 0.63 0.54 0.52 0.51 0.50 0.92 0.74 0.60 0.52 0.51 0.50 0.50 0.99 0.98 0.92 0.79 0.74 0.73 0.72 0.98 LIN MAG S22 ANG deg -3.9 -8.8 -15.5 -23.0 -27.1 -30.1 -33.9 -6.4 -14.3 -20.4 -22.6 -25.5 -28.2 --32.1 -9.6 -18.6 -21.9 -20.7 -23.2 -26.4 -30.4 -11.4 -19.9 -21.5 -19.3 -22.4 -25.3 -29.3 -12.9 -20.8 -20.7 -18.3 -21.3 -24.3 -29.3 -2.9 -7.1 -12.6 -19.3 -23.2 -26.1 -29.6 -5.2 Document Number 85041 Rev. 1.5, 08-Sep-08 www.vishay.com 3 BFW92A Vishay Semiconductors VCE/V IC/mA f/MHz LIN MAG 100 200 500 800 1000 1200 10 10 40 100 200 500 800 1000 1200 10 14 40 100 200 500 800 1000 1200 10 20 40 100 200 500 800 1000 1200 0.64 0.49 0.28 0.23 0.24 0.26 0.54 0.45 0.31 0.19 0.19 0.20 0.23 0.46 0.36 0.25 0.17 0.18 0.20 0.23 0.36 0.28 0.20 0.16 0.18 0.20 0.23 S11 ANG deg -40.8 -71.5 -131.6 -174.1 165.2 148.7 -25.0 -56.6 -92.1 -156.0 166.8 149.3 136.8 -29.9 -65.4 -103.9 -168.1 159.0 143.7 132.8 -37.2 -79.1 -120.0 -178.6 152.8 139.5 130.3 12.70 9.77 5.11 3.37 2.76 2.35 22.82 18.41 12.55 5.82 3.77 3.06 2.61 27.41 20.92 13.42 6.01 3.87 3.14 2.67 32.18 22.97 14.03 6.12 3.91 3.18 2.70 LIN MAG S21 ANG deg 148.3 126.0 93.3 76.0 66.7 58.7 160.8 137.9 115.3 87.5 72.4 64.1 57.0 157.7 132.7 111.0 85.4 71.1 63.2 56.2 153.6 127.2 106.7 83.3 69.8 62.0 55.2 0.02 0.03 0.05 0.07 0.08 0.09 0.01 0.02 0.02 0.05 0.07 0.09 0.10 0.01 0.01 0.02 0.05 0.07 0.09 0.10 0.01 0.01 0.02 0.05 0.07 0.09 0.10 LIN MAG S12 ANG deg 71.7 62.2 59.4 62.2 63.1 63.3 80.2 70.6 66.0 68.5 68.9 67.9 66.5 79.7 70.9 69.0 71.5 70.7 69.2 67.3 79.2 72.3 72.4 74.0 72.4 70.3 68.1 0.93 0.82 0.69 0.66 0.65 0.64 0.96 0.86 0.73 0.63 0.62 0.61 0.60 0.95 0.83 0.70 0.62 0.61 0.60 0.60 0.93 0.79 0.67 0.61 0.60 0.60 0.59 LIN MAG S22 ANG deg -11.3 -16.5 -18.9 -21.5 -24.4 -27.9 -7.7 -14.9 -17.6 -17.1 -20.1 -22.9 -26.7 -9.0 -15.8 -17.0 -16.0 -19.4 -22.1 -26.3 -10.2 -16.2 -16.0 -15.1 -18.3 -21.6 -25.8 Typical Characteristics (Tamb = 25 C unless otherwise specified) 4000 3500 3000 2500 2000 1500 1000 500 0 0 (C) 13610 f T - Transition Frequency ( MHz ) (mW) V CE = 5 V f = 300 MHz 5 10 15 20 25 30 35 40 45 I C - Collector Current ( mA ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Transition Frequency vs. Collector Current www.vishay.com 4 Document Number 85041 Rev. 1.5, 08-Sep-08 BFW92A Vishay Semiconductors Ccb - Collector Base Capacitance ( pF ) 1.0 0.8 0.6 0.4 0.2 f = 1 MHz 0.0 0 8 12 16 20 V CB - Collector Base Voltage ( V ) 4 13607 5 F - Noise Figure ( dB ) 4 3 2 1 0 0 5 10 15 20 25 I C - Collector Current ( mA ) 30 V CE = 5 V f = 800 MHz ZS = 50 13611 Figure 3. Collector Base Capacitance vs. Collector Base Voltage Figure 4. Noise Figure vs. Collector Current Package Dimensions in mm 96 12244 Document Number 85041 Rev. 1.5, 08-Sep-08 www.vishay.com 5 BFW92A Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 85041 Rev. 1.5, 08-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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